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vishay siliconix SIZ914DT document number: 62905 s13-2181-rev. a, 14-oct-13 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com dual n-channel 30 v (d-s) mosfets features ? trenchfet ? gen iv power mosfets ? 100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? cpu core power ? computer/server peripherals ? synchronous buck converter ? pol ? telecom dc/dc notes: a. package limited b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpair is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation pr ocess in manufacturing. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 62 c/w for channel-1 and 55 c/w for channel-2. g. t c = 25 c. product summary v ds (v) r ds(on) ( ? ) (max.) i d (a) g q g (typ.) channel-1 30 0.00640 at v gs = 10 v 16 a 7.2 nc 0.01000 at v gs = 4.5 v 16 a channel-2 30 0.00137 at v gs = 10 v 40 a 30.1 nc 0.00194 at v gs = 4.5 v 40 a orderin g information: SIZ914DT-t1-ge3 (lead (p b )-free and halogen-free) s 2 g 2 g 1 d 1 d 1 6 7 8 3 2 1 d 1 s 1 /d 2 5 mm 6 mm d 1 4 5 pin 1 powerpair ? 6 x 5 pin 9 d 1 s 2 n-channel 2 mosfet g 1 s 1 /d 2 g 2 schotty diode n-channel 1 mosfet absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol channel-1 channel-2 unit drain-source voltage v ds 30 v gate-source voltage v gs + 20, - 16 continuous drain current (t j = 150 c) t c = 25 c i d 16 a 40 a a t c = 70 c 16 a 40 a t a = 25 c 16 a, b, c 40 a, b, c t a = 70 c 15.5 b, c 38.8 b, c pulsed drain current (t = 100 s) i dm 80 100 continuous source drain diode current t c = 25 c i s 19 28 t a = 25 c 3.25 b, c 4.3 b, c single pulse avalanche current l = 0.1 mh i as 10 20 single pulse avalanche energy e as 520 mj maximum power dissipation t c = 25 c p d 22.7 100 w t c = 70 c 14.5 64 t a = 25 c 3.9 b, c 5.2 b, c t a = 70 c 2.5 b, c 3.3 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol channel-1 channel-2 unit typ. max. typ. max. maximum junction-to-ambient b, f t ? 10 s r thja 25 32 19 24 c/w maximum junction-to-case (drain) steady state r thjc 4.4 5.5 1 1.25
www.vishay.com 2 document number: 62905 s13-2181-rev. a, 14-oct-13 vishay siliconix SIZ914DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a ch-1 30 v v gs = 0 v, i d = 250 a ch-2 30 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 1.2 2.4 v v ds = v gs , i d = 250 a ch-2 1 2.4 gate source leakage i gss v ds = 0 v, v gs = 20 v, - 16 v ch-1 100 na ch-2 100 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v ch-1 1 a v ds = 30 v, v gs = 0 v ch-2 60 240 v ds = 30 v, v gs = 0 v, t j = 55 c ch-1 5 v ds = 30 v, v gs = 0 v, t j = 55 c ch-2 0.5 5 ma on-state drain current b i d(on) v ds ?? 5 v, v gs = 10 v ch-1 20 a v ds ?? 5 v, v gs = 10 v ch-2 25 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 19 a ch-1 0.00530 0.00640 ? v gs = 10 v, i d = 20 a ch-2 0.00114 0.00137 v gs = 4.5 v, i d = 15 a ch-1 0.00800 0.01000 v gs = 4.5 v, i d = 20 a ch-2 0.00155 0.00194 forward transconductance b g fs v ds = 10 v, i d = 19 a ch-1 55 s v ds = 10 v, i d = 20 a ch-2 68 dynamic a input capacitance c iss channel-1 v ds = 15 v, v gs = 0 v, f = 1 mhz channel-2 v ds = 15 v, v gs = 0 v, f = 1 mhz ch-1 1208 pf ch-2 5603 output capacitance c oss ch-1 375 ch-2 2202 reverse transfer capacitance c rss ch-1 30 ch-2 168 c rss /c iss ratio ch-1 0.025 0.050 ch-2 0.032 0.064 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 20 a ch-1 17 26 nc v ds = 15 v, v gs = 10 v, i d = 20 a ch-2 66 99 channel-1 v ds = 15 v, v gs = 4.5 v, i d = 20 a channel-2 v ds = 15 v, v gs = 4.5 v, i d = 20 a ch-1 7.2 11 ch-2 30.1 45.2 gate-source charge q gs ch-1 3.6 ch-2 10.9 gate-drain charge q gd ch-1 0.94 ch-2 3.8 output charge q oss v ds = 15 v, v gs = 0 v ch-1 10 ch-2 60 gate resistance r g f = 1 mhz ch-1 0.5 2.5 5 ? ch-2 0.2 1 2
document number: 62905 s13-2181-rev. a, 14-oct-13 www.vishay.com 3 vishay siliconix SIZ914DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? channel-2 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? ch-1 16 24 ns ch-2 40 60 rise time t r ch-1 11 20 ch-2 127 190 turn-off delay time t d(off) ch-1 15 23 ch-2 40 60 fall time t f ch-1 5 10 ch-2 19 29 tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 10 v, r g = 1 ? channel-2 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 10 v, r g = 1 ? ch-1 10 20 ch-2 12 20 rise time t r ch-1 10 20 ch-2 30 45 turn-off delay time t d(off) ch-1 20 30 ch-2 35 53 fall time t f ch-1 5 10 ch-2 7 14 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ch-1 40 a ch-2 40 pulse diode forward current (t = 100 s) i sm ch-1 80 ch-2 100 body diode voltage v sd i s = 10 a, v gs = 0 v ch-1 0.8 1.2 v i s = 2 a, v gs = 0 v ch-2 0.33 0.42 body diode reverse recovery time t rr channel-1 i f = 10 a, di/dt = 100 a/s, t j = 25 c channel-2 i f = 10 a, di/dt = 100 a/s, t j = 25 c ch-1 15 23 ns ch-2 62 93 body diode reverse recovery charge q rr ch-1 4 8 nc ch-2 96 144 reverse recovery fall time t a ch-1 9 ns ch-2 30.5 reverse recovery rise time t b ch-1 6 ch-2 31.5
www.vishay.com 4 document number: 62905 s13-2181-rev. a, 14-oct-13 vishay siliconix SIZ914DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com channel-1 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 20 40 60 80 0 0.5 1 1.5 2 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 10 v thru 5 v v gs = 3 v v gs = 4 v 0.0000 0.0030 0.0060 0.0090 0.0120 0.0150 0 14 28 42 56 70 r ds(on) - on-resistance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 5 10 15 20 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 24 v v ds = 8 v v ds = 15 v i d = 19 a transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 0 0.6 1.2 1.8 2.4 3 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 270 540 810 1080 1350 0 5 10 15 20 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.7 0.95 1.2 1.45 1.7 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) i d = 19 a v gs = 10 v v gs = 4.5 v
document number: 62905 s13-2181-rev. a, 14-oct-13 www.vishay.com 5 vishay siliconix SIZ914DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com channel-1 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j - temperature ( c) i d = 250 a on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0 0.005 0.01 0.015 0.02 0 2 4 6 8 10 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 19 a 0 14 28 42 56 70 0.001 0.01 0.1 1 10 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 100 ms limited by r ds(on) * 1 ms t a = 25 c single pulse bvdss limited 10 ms 100 s 1 s dc 10 s limited by i dm i d limited
www.vishay.com 6 document number: 62905 s13-2181-rev. a, 14-oct-13 vishay siliconix SIZ914DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com channel-1 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 13 26 39 52 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) power, junction-to-case 0 6 12 18 24 30 0 25 50 75 100 125 150 power (w) t c - case temperature ( c) power, junction-to-ambient 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 power (w) t a - ambient temperature ( c)
document number: 62905 s13-2181-rev. a, 14-oct-13 www.vishay.com 7 vishay siliconix SIZ914DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com channel-1 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse normalized thermal transient impedance, junction-to-case 0.1 1 0.0001 0.001 0.01 0.1 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
www.vishay.com 8 document number: 62905 s13-2181-rev. a, 14-oct-13 vishay siliconix SIZ914DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com channel-2 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 20 40 60 80 0 0.5 1 1.5 2 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 3 v v gs = 10 v thru 4 v 0 0.0005 0.001 0.0015 0.002 0.0025 0 15 30 45 60 r ds(on) - on-resistance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 14 28 42 56 70 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 24 v v ds = 8 v, 15 v i d = 20 a transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 0 0.6 1.2 1.8 2.4 3 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 2000 4000 6000 8000 0 6 12 18 24 30 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.65 0.9 1.15 1.4 1.65 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) i d = 20a v gs = 10 v v gs = 4.5 v v
document number: 62905 s13-2181-rev. a, 14-oct-13 www.vishay.com 9 vishay siliconix SIZ914DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com channel-2 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage reverse current (schottky) 0.1 1 10 100 0 0.18 0.36 0.54 0.72 0.9 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 - 50 - 25 0 25 50 75 100 125 150 i r - reverse (a) t j - temperature ( c) v ds = 10 v, 20 v v ds = 30 v on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 0.001 0.002 0.003 0.004 0.005 0 2 4 6 8 10 r ds(on) - on-resistance ( ) v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 20 a 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified i dm limited 100 ms limited by r ds(on) * 1 ms t a = 25 c single pulse bvdss limited 10 ms 100 s 10 s, 1 s dc i d limited
www.vishay.com 10 document number: 62905 s13-2181-rev. a, 14-oct-13 vishay siliconix SIZ914DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com channel-2 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 60 120 180 240 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) power, junction-to-case 0 30 60 90 120 0 25 50 75 100 125 150 power (w) t c - case temperature ( c) power, junction-to-ambient 0.0 0.7 1.4 2.1 2.8 0 25 50 75 100 125 150 power (w) t a - ambient temperature ( c)
document number: 62905 s13-2181-rev. a, 14-oct-13 www.vishay.com 11 vishay siliconix SIZ914DT this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com channel-2 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62905 . normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja =55 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted normalized thermal transient impedance, junction-to-case 0.1 1 0.0001 0.001 0.01 0.1 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 single pulse 0.05 0.02
package information www.vishay.com vishay siliconix revision: 22-dec-14 1 document number: 63656 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpair ? 6 x 5 case outline millimeters inches dim. min. nom. max. min. nom. max. a 0.70 0.75 0.80 0.028 0.030 0.032 a1 0.00 - 0.10 0.000 - 0.004 a3 0.15 0.20 0.25 0.006 0.007 0.009 b 0.43 0.51 0.61 0.017 0.020 0.024 b1 0.25 bsc 0.010 bsc d 4.90 5.00 5.10 0.192 0.196 0.200 d1 3.75 3.80 3.85 0.148 0.150 0.152 e 5.90 6.00 6.10 0.232 0.236 0.240 e1 option aa (for w/b) 2.62 2.67 2.72 0.103 0.105 0.107 e1 option ab (for bwl) 2.42 2.47 2.52 0.095 0.097 0.099 e2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 bsc 0.050 bsc k option aa (for w/b) 0.45 typ. 0.018 typ. k option ab (for bwl) 0.65 typ. 0.025 typ. k1 0.66 typ. 0.025 typ. l 0.33 0.43 0.53 0.013 0.017 0.020 l3 0.23 bsc 0.009 bsc z 0.34 bsc 0.013 bsc ecn: t14-0782-rev. c, 22-dec-14 dwg: 6005 a1 b1 f f e pin 1 pin 2 pin 3 pin 4 pin 8 pin 7 pin 6 pin 5 a e2 e e1 k z l d1 b k1 back s ide view 0.10 c d1 d a 0.08 c pin # 1 ident (optional) 0.10 c 2x c a3 l3 top s ide view 0.10 c 2x pin 8 pin 7 pin 6 pin 5 pin 1 pin 2 pin 3 pin 4
pad pattern www.vishay.com vishay siliconix revision: 16-feb-15 1 document number: 67480 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for powerpair ? 6 x 5 note ? linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. 2.835 (0.112) 2.12 (0.083) 0.55 (0.022) 1.21 (0.048) 2.13 (0.084) 2.835 (0.112) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) 1.905 (0.075) 0.53 (0.021) 0.44 (0.017) 0.92 (0.036) 0.66 (0.026) 0.45 (0.018) 0.53 (0.021) 2.67 (0.105) 0.28 (0.011) dimen s ion s in millimeter s (inch) pin 1 (0, 0) 4 (0.157) 4 (0.157)
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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